PROBING THE MINORITY-CARRIER QUASI-FERMI LEVEL IN EPITAXIAL SCHOTTKY-BARRIER DIODES.

被引：0

作者：

Wagner, Lawrence F. ^{[1
]}

Chuang, C.T. ^{[1
]}

机构：

[1] IBM, Device Design & Modeling, Dep, Hopewell Junction, NY, USA, IBM, Device Design & Modeling Dep, Hopewell Junction, NY, USA

来源：

IEEE Transactions on Electron Devices | 1985年 / ED-32卷 / 04期

关键词：

EPITAXIAL SCHOTTKY-BARRIER DIODES - HOLE QUASI-FERMI LEVEL - MINORITY-CARRIER - SELF-ALIGNED FLOATING GUARD-RING STRUCTURE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：753 / 757

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