Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

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机构：
[1] Yang, V.K.
[2] Ting, S.M.
[3] Groenert, M.E.
[4] Bulsara, M.T.
[5] Currie, M.T.
[6] Leitz, C.W.
[7] Fitzgerald, E.A.
来源：
Yang, V.K. | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Cathodoluminescence - Light emission - Semiconducting indium gallium arsenide - Semiconductor growth - Substrates - Thermal expansion;
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摘要：
An InGaAs quantum well luminescent test structure grown on GaAs, Si, Ge and SiGe was compared and analyzed. The advantage of InGaAs quantum well growth on SiGe susbstrates over growth on Ge substrates was demonstrated. It was found that strained quantum well structures optimized for growth on GaAs substrates could not be directly transferred onto SiGe or Ge substrates due to the differences in thermal expansion coefficient and lattice parameter of the substrates.
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