SOME UNEXPECTED EQUILIBRIUM AND TRANSPORT PROPERTIES IN INDIUM-DOPED SILICON.

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作者：
CAPPELLETTI, P. [1 ]
CEROFOLINI, G.F. [1 ]
PIGNATEL, G.U. [1 ]
机构：
[1] SGS, 20041 Agrate Milano, Italy
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| 1600年 / V 53期
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