Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy

被引：0
|
作者：
Gong, X.Y. [1 ]
Yamaguchi, T. [1 ]
Kan, Hirofumi [1 ]
Makino, T. [1 ]
Nakatsukasa, T. [1 ]
Kaneko, Y. [1 ]
Aoyama, M. [1 ]
Rowell, Nelson L. [1 ]
Wang, A.G. [1 ]
Rinfret, R. [1 ]
机构：
[1] Hamamatsu Photonics k.k., Hamakita, Jpn
来源：
Proceedings of SPIE - The International Society for Optical Engineering | 1994年 / 2364卷
关键词：
Ellipsometry - Epilayers - Photodetector fabrication;
D O I：
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学科分类号：
摘要：
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页码：41 / 46
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