Fabrication of silicon field emitter arrays with 0.1-μm-diameter gate by focused ion beam lithography

被引：0
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作者：
Yamaoka, Yoshikazu [1 ]
Goto, Takashi [1 ]
Nakao, Masao [1 ]
Kanemaru, Seigo [1 ]
Itoh, Junji [1 ]
机构：
[1] Sanyo Electric Co, Ltd, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 12 B期
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页码：6932 / 6934
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