Emerging SiGe technology - a review

被引：0
|
作者：
Voinigescu, S. [1 ]
Schumacher, M. [1 ]
Iniewski, K. [1 ]
Lisak, R. [1 ]
Parpia, Z. [1 ]
机构：
[1] Virtual Fab Services Inc, Toronto, Canada
来源：
Electron Technology (Warsaw) | 1993年 / 26卷 / 04期
关键词：
Device performance - Heterojunction bipolar transistors - Material properties - Shrinking feature size - Silicon germanium technology;
D O I：
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学科分类号：
摘要：
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页码：25 / 64
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