Defect control and defect engineering in ion-implanted diamond

被引:0
|
作者
Gippius, A.A. [1 ]
机构
[1] P.N. Lebedev Physical Inst of the, Acad of Sciences of Russia, Moscow, Russia
来源
Materials Science Forum | 1995年 / 196-201卷 / pt 1期
关键词
Semiconducting diamonds;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:85 / 90
相关论文
共 50 条
  • [31] DEFECT ANNEALING INVESTIGATION IN ION-IMPLANTED SI BY CESR TECHNIQUE
    DVURECHENSKY, AV
    GERASIMENKO, NN
    GLAZMAN, VB
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 31 (01): : 37 - 40
  • [32] A COMPREHENSIVE STUDY OF DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED INP
    SLATER, M
    KOSTIC, S
    NOBES, MJ
    CARTER, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 429 - 432
  • [33] LOCALIZED VIBRATIONAL MODES OF A PERSISTENT DEFECT IN ION-IMPLANTED SIC
    PATRICK, L
    CHOYKE, WJ
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (03) : 565 - 567
  • [34] EFFICIENCY OF DEFECT BUILDUP IN ION-IMPLANTED POLYCRYSTALLINE SILICON FILMS
    DVURECHENSKII, AV
    POTAPOVA, LP
    KALININ, VV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02): : 457 - 462
  • [35] Impurity and clustering effects on defect evolution in ion-implanted Si
    Libertino, S
    Benton, JL
    Coffa, S
    Eaglesham, DJ
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1998, 20 (10): : 1529 - 1548
  • [36] Defect behavior in ion-implanted silicon by rapid thermal annealing
    Xu, Li
    Qian, Peixin
    Li, Zhijian
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (08): : 513 - 516
  • [37] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED AMORPHOUS-SILICON
    COFFA, S
    PRIOLO, F
    BATTAGLIA, A
    PHYSICAL REVIEW LETTERS, 1993, 70 (24) : 3756 - 3759
  • [38] Formation of cellular defect structure on GaSb ion-implanted at low temperature
    Nitta, N
    Taniwaki, M
    Hayashi, Y
    Yoshiie, T
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (04) : 1799 - 1802
  • [39] Defect accumulation and recovery in ion-implanted 6H-SiC
    Jiang, W
    Weber, WJ
    Wang, CM
    DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III, 2002, 719 : 319 - 324
  • [40] Point Defect Kinetics and Extended-Defect Formation during Millisecond Processing of Ion-Implanted Silicon
    Gable, K.
    Jones, K. S.
    MATERIALS SCIENCE WITH ION BEAMS, 2010, 116 : 213 - 226