Growth modes of organic semiconductor thin films using organic molecular beam deposition: epitaxy, van der Waals epitaxy, and quasi-epitaxy

被引:0
|
作者
Princeton Univ, Princeton, United States [1 ]
机构
来源
Supramol Sci | / 1-2卷 / 127-139期
关键词
The authors are grateful to Professor A. Kahn; C; Kendrick; Professor P. Eisenbergera nd Dr P. Fenter for many helpful discussions. Also we thank the AFOSR and NSF-MRSEC for their support of this work;
D O I
暂无
中图分类号
学科分类号
摘要
48
引用
收藏
相关论文
共 50 条
  • [21] Growth of CeO2 thin films by metal-organic molecular beam epitaxy
    Ikegawa, Sumio
    Motoi, Yuichi
    Thin Solid Films, 1996, 281-282 (1-2): : 60 - 63
  • [22] van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward
    Singh, Deependra Kumar
    Gupta, Govind
    MATERIALS ADVANCES, 2022, 3 (15): : 6142 - 6156
  • [23] van der Waals epitaxy of transition metal dichalcogenides using metal organic precursors (MOVDWE)
    Tiefenbacher, S
    Pettenkofer, C
    Jaegermann, W
    THIN FILMS - STRUCTURE AND MORPHOLOGY, 1997, 441 : 591 - 595
  • [24] Van der Waals epitaxy of transition metal dichalcogenides using metal organic precursors (MOVDWE)
    Tiefenbacher, S
    Pettenkofer, C
    Jaegermann, W
    FRONTIERS IN NANOSCALE SCIENCE OF MICRON/SUBMICRON DEVICES, 1996, 328 : 59 - 65
  • [25] van der Waals epitaxy of CdTe thin film on graphene
    Mohanty, Dibyajyoti
    Xie, Weiyu
    Wang, Yiping
    Lu, Zonghuan
    Shi, Jian
    Zhang, Shengbai
    Wang, Gwo-Ching
    Lu, Toh-Ming
    Bhat, Ishwara B.
    APPLIED PHYSICS LETTERS, 2016, 109 (14)
  • [26] Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
    Wangila, Emmanuel
    Lytvyn, Peter
    Stanchu, Hryhorii
    Gunder, Calbi
    de Oliveira, Fernando Maia
    Saha, Samir
    Das, Subhashis
    Eldose, Nirosh
    Li, Chen
    Zamani-Alavijeh, Mohammad
    Benamara, Mourad
    Mazur, Yuriy I.
    Yu, Shui-Qing
    Salamo, Gregory J.
    CRYSTALS, 2023, 13 (11)
  • [27] Molecular beam epitaxy of quasi-freestanding transition metal disulphide monolayerson van der Waals substrates: a growth study
    Hall, Joshua
    Pielic, Borna
    Murray, Clifford
    Jolie, Wouter
    Wekking, Tobias
    Busse, Carsten
    Kralj, Marko
    Michely, Thomas
    2D MATERIALS, 2018, 5 (02):
  • [28] Growth modes of β-Ga2O3 on h-BN: Remote epitaxy and van der Waals epitaxy
    Shi, Yiming
    Meng, Junhua
    Xia, Zhengchang
    Huang, Jidong
    Liu, Wenkang
    Jiang, Ji
    Yin, Zhigang
    Deng, Jinxiang
    Zhang, Xingwang
    NANO RESEARCH, 2025, 18 (02)
  • [29] Van der Waals epitaxy: A new way for growth of Ⅲ-nitrides
    CHEN Yang
    JIA Yu-Ping
    SHI Zhi-Ming
    SUN Xiao-Juan
    LI Da-Bing
    Science China(Technological Sciences), 2020, (03) : 528 - 530
  • [30] Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy
    Zhao, Chunsong
    Batiz, Humberto
    Yasar, Bengisu
    Ji, Wenbo
    Scott, Mary C.
    Chrzan, Daryl C.
    Javey, Ali
    ADVANCED MATERIALS INTERFACES, 2022, 9 (05)