New self-aligned and T-shaped gate technology for GaAs power MESFETs

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Pohang Univ of Science and, Technology, Pohang, Korea, Republic of ^{[1
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Solid State Electron | / 11卷 / 2063-2068期

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[41] ELECTRODE PARASITIC CAPACITANCES IN SELF-ALIGNED AND DEEP-RECESSED GAAS-MESFETS
GOEL, AK
SOLID-STATE ELECTRONICS, 1988, 31 (10) : 1471 - 1476
[42] ORIENTATION AND ION-IMPLANTED TRANSVERSE EFFECTS IN SELF-ALIGNED GAAS-MESFETS
CHEN, CH
PECZALSKI, A
SHUR, MS
CHUNG, HK
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1470 - 1481
[43] EXAMINATION OF PITTING FORMATION IN RAPID THERMAL ANNEALING OF SELF-ALIGNED GAAS-MESFETS
LAHAV, A
LAPINSKY, RL
HENRY, TC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1096 - 1099
[44] RAPID THERMAL ANNEALING WITH ARSENIC OVERPRESSURE FOR PROCESSING OF SELF-ALIGNED GAAS-MESFETS
LAHAV, A
LAPINSKY, RL
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) : C195 - C195
[45] 2-DIMENSIONAL SIMULATION OF ORIENTATION EFFECTS IN SELF-ALIGNED GAAS-MESFETS
LO, SH
LEE, CP
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[46] APPLICATION OF THE LAMP-ANNEALING METHOD TO THE N+-LAYER OF WSIX-GATE SELF-ALIGNED GAAS-MESFETS
OHNISHI, T
YAMAGUCHI, Y
INADA, T
YOKOYAMA, N
NISHI, H
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (10) : 403 - 405
[47] T-SHAPED SCHOTTKY-BARRIER GATE GAAS FET
ASAI, K
SUGETA, T
IDA, M
FUJIMOTO, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (01): : K7 - &
[48] A self-aligned double-gate polysilicon TFT technology
Zhang, SD
Han, R
Sin, JKO
Chan, MS
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 395 - 398
[49] THRESHOLD VOLTAGE ADJUSTABLE PROCESS FOR SELF-ALIGNED GATE GAAS JFET
TIKU, SK
ELECTRONICS LETTERS, 1985, 21 (23) : 1091 - 1093
[50] APPLICATION OF TUNGSTEN SILICIDE SELF-ALIGNED GATE TO GAAS-FETS
KAO, JC
WU, OKT
SWANSON, A
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C221 - C221

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