Deep interface states in SiO2/p-type α-SiC structure

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作者：
Inoue, Naoya [1 ]
Kimoto, Tsunenobu [1 ]
Yano, Hiroshi [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 11 A期
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