Epitaxial growth of C54 TiSi2 on Si(001) by self-aligned process

被引：0

作者：

Wang, Li-Ming ^{[1
]}

Wu, Shinn-Tyan ^{[1
]}

机构：

[1] Natl Tsing-Hua Univ, Hsinchu, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1998年 / 37卷 / 02期

关键词：

Self aligned silicide - Superlattice mismatch calculations - Titanium silicide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Titanium films of 35 nm thickness are deposited on Si(001) by direct current magnetron sputtering. Rapid thermal annealing (RTA) in nitrogen atmosphere is performed on the films for 20 s at 670 °C. The residual titanium is etched off with a solution of H2O2:NH4OH:H2O (1:1:5). A second RTA at 900 °C for 10 s is applied again. The result is a C54 phase of TiSi2 of 65 nm thickness. By means of X-ray diffraction analysis, transmission electron microscopy and superlattice mismatch calculation, two epitaxial relationships: (004)C54(001)Si, [11 3 0]C54[110]Si and (311)C54(001)Si, [27¯1]C54[110]Si are established.

引用

页码：638 / 642

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