FIELD EFFECT IN AN n-GaAs METAL-ANODIC OXIDE-FILM JUNCTION.

被引：0

作者：

Tikhov, S.V. ^{[1
]}

Karpovich, I.A. ^{[1
]}

Martynov, V.V. ^{[1
]}

Funina, G.V. ^{[1
]}

机构：

[1] Lobachevskii State Univ, Gorki, USSR, Lobachevskii State Univ, Gorki, USSR

来源：

Soviet physics journal | 1986年 / 29卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：304 / 307

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