Metalorganic vapor phase epitaxy growth and study of stress in AlGaN using epitaxial AlN as underlying layer

被引：0
|
作者：
Kida, Yoshihiro [1 ]
Shibata, Tomohiko [1 ,2 ]
Miyake, Hideto [1 ]
Hiramatsu, Kazumasa [1 ]
机构：
[1] Department of Electrical Engineering, Faculty of Engineering, Mie University, 1515 Kamihama, Tsu, Mie 514-8507, Japan
[2] NGK Insulators, Ltd., 2-56 Suda-cho, Mizuho-ku, Nagoya 467-8530, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 6 A期
关键词：
D O I：
10.1143/jjap.42.l572
中图分类号：
学科分类号：
摘要：
16
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