GIGAHERTZ LOGIC BASED ON INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY VAPOR PHASE EPITAXY.

被引：0

作者：

Antreasyan, Arsam ^{[1
]}

Garbinski, P.A. ^{[1
]}

Mattera Jr., Vincent D. ^{[1
]}

Wiesenfeld, Jay M. ^{[1
]}

Tucker, Rodney S. ^{[1
]}

Shah, Nitin J. ^{[1
]}

DiGiuseppe, Michael A. ^{[1
]}

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 09期

关键词：

SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A high-speed inverter circuit based on novel enhancement-mode InP metal-insulator-semiconductor field-effect transistors is reported. The devices exhibit an extrinsic transconductance as high as 320 mS/mm at room temperature. Utilizing electrooptic sampling, the authors have measured the propagation delay of the field-effect transistors to be as short as 15 ps/stage at room temperature. These are the highest transconductance and the shortest propagation delay measured with a field-effect transistor on an InP substrate. Furthermore, the propagation delay measured in this work is comparable to those obtained with GaAs/AlGaAs selectively doped heterojunction transistors at similar temperature.

引用

页码：1897 / 1901

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