Production and characterization of boron- and silicon-doped carbon clusters

被引：0
|
作者：
机构：
来源：
Chem Phys Lett | / 3卷 / 269期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Bacterial adhesion on silicon-doped diamond-like carbon films
    Zhao, Q.
    Liu, Y.
    Wang, C.
    Wang, S.
    DIAMOND AND RELATED MATERIALS, 2007, 16 (08) : 1682 - 1687
  • [42] Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals
    Zhou, Shu
    Pi, Xiaodong
    Ni, Zhenyi
    Luan, Qingbin
    Jiang, Yingying
    Jin, Chuanhong
    Nozaki, Tomohiro
    Yang, Deren
    PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION, 2015, 32 (02) : 213 - 221
  • [43] Performance of Silicon-Doped Carbon Composite Target with Hot Pressing Process
    Bai X.
    Liu Y.
    Gui T.
    Wang X.
    Yang L.
    Wang X.
    Xiyou Jinshu/Chinese Journal of Rare Metals, 2022, 46 (04): : 538 - 544
  • [44] Production of thin film silicon-doped hydroxyapatite via sputter deposition
    Porter, AE
    Rea, SM
    Galtrey, M
    Best, SM
    Barber, ZH
    JOURNAL OF MATERIALS SCIENCE, 2004, 39 (05) : 1895 - 1898
  • [45] Characterization of undoped and silicon-doped InGaN/GaN single quantum wells
    B. Schineller
    P. H. Lim
    G. P. Yablonskii
    E. V. Lutsenko
    O. Schön
    H. Protzmann
    M. Heuken
    K. Heime
    Journal of Electronic Materials, 2000, 29 : 31 - 36
  • [46] Doubly boron- doped pentacenes as emitters for OLEDs
    John, Alexandra
    Bolte, Michael
    Lerner, Hans-Wolfram
    Meng, Guoyun
    Wang, Suning
    Peng, Tai
    Wagner, Matthias
    JOURNAL OF MATERIALS CHEMISTRY C, 2018, 6 (40) : 10881 - 10887
  • [47] Characterization of undoped and silicon-doped InGaN/GaN single quantum wells
    Schineller, B
    Lim, PH
    Yablonskii, GP
    Lutsenko, EV
    Schön, O
    Protzmann, H
    Heuken, M
    Heime, K
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (01) : 31 - 36
  • [48] Electrical properties of boron- and phosphorous-doped microcrystalline silicon thin films prepared by magnetron sputtering of heavily doped silicon targets
    Wang, Weiyan
    Huang, Jinhua
    Xu, Wei
    Huang, Junjun
    Zeng, Yuheng
    Song, Weijie
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (06) : 2122 - 2127
  • [49] Boron- and Nitrogen-Doped Carbon Nanotubes with Surface Defects: An Ab Initio Study
    Al-Tarawneh, Khaldoun M.
    Al-Aqtash, Nabil
    JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, 2013, 10 (06) : 1446 - 1452
  • [50] IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN BORON-, GALLIUM-DOPED, AND INDIUM-DOPED SILICON
    LINARES, LC
    LI, SS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C366 - C367
12345