Calorimetric analysis of thin-film reactions: experiments and modeling in the nickel/silicon system

被引：0
|
作者：
机构：
来源：
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Modeling and simulation of hydrogenated amorphous silicon thin-film transistors
    Hafdi, Z
    Aida, MS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (03): : 1192 - 1198
  • [12] Modeling of kink effect in polycrystalline silicon thin-film transistors
    Deng, Wanling
    Zheng, Xueren
    SOLID-STATE ELECTRONICS, 2009, 53 (06) : 669 - 673
  • [13] Modeling and simulation of hydrogenated amorphous silicon thin-film transistors
    Hafdi, Z., 1600, Japan Society of Applied Physics (44):
  • [14] On-current modeling of polycrystalline silicon thin-film transistors
    Gupta, N
    Tyagi, BP
    PHYSICA SCRIPTA, 2005, 72 (04) : 339 - 342
  • [15] Optical and electrical modeling of thin-film silicon solar cells
    Zeman, M.
    Krc, J.
    JOURNAL OF MATERIALS RESEARCH, 2008, 23 (04) : 889 - 898
  • [16] Optical and electrical modeling of thin-film silicon solar cells
    Zeman M.
    Krc J.
    Journal of Materials Research, 2008, 23 (4) : 889 - 898
  • [17] Silicon for thin-film transistors
    Wagner, S
    Gleskova, H
    Cheng, IC
    Wu, M
    THIN SOLID FILMS, 2003, 430 (1-2) : 15 - 19
  • [18] ANALYSIS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS
    HACK, M
    SHUR, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1291 - 1294
  • [19] Ceramic thin-film reactions
    Heffelfinger, JR
    Kotula, PG
    Carter, CB
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 2, 1996, 207- : 705 - 708
  • [20] CONTACT RESISTIVITY OF SILICON SILICIDE STRUCTURES FORMED BY THIN-FILM REACTIONS
    FINETTI, M
    GUERRI, S
    NEGRINI, P
    SCORZONI, A
    SUNI, I
    THIN SOLID FILMS, 1985, 130 (1-2) : 37 - 45
12345