MILLIMETER-WAVE LOW-NOISE HEMT'S.

被引：0
|
作者：
Duh, K.H.G. [1 ]
Chao, P.C. [1 ]
Smith, P.M. [1 ]
Lester, L.F. [1 ]
Lee, B.R. [1 ]
Hwang, J.C.M. [1 ]
机构：
[1] GE, Syracuse, NY, USA, GE, Syracuse, NY, USA
来源：
| 1838年 / ED-33期
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摘要：
TRANSISTORS, FIELD EFFECT
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