Simple model for gate-voltage dependent parasitic resistance in short channel lightly doped drain metal oxide semiconductor field effect transistors

被引：0
|
作者：
Lee, Jung-Il [1 ]
Lee, Myung-Bok [1 ]
Lee, Sang Young [1 ]
Kang, Kwang Nham [1 ]
Yoon, Kyung Sik [1 ]
机构：
[1] Korea Inst of Science and Technology, Seoul, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 04期
关键词：
Gate Voltage - Lightly Doped Drain Structure - Parasitic Resistance - Velocity Saturation;
D O I：
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中图分类号：
学科分类号：
摘要：
引用
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页码：535 / 537
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