共 50 条
- [33] SINGLE TRANSVERSE MODE CONDITION IN LONG WAVELENGTH SCH SEMICONDUCTOR LASER DIODES. Transactions of the Institute of Electronics, Information and Communication Engineers, Section E (, 1987, E70 (02): : 130 - 134
- [34] QUASI-OPTICAL MILLIMETER BAND POWER COMBINER USING GUNN DIODES. Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z, 1987, 30 (10): : 70 - 72
- [36] Transition between anticipating and lag synchronisation in chaotic external cavity laser diodes. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES X, 2002, 4646 : 542 - 546
- [37] POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN DIODES. Telecommunications and Radio Engineering (English translation of Elektrosvyaz and Radiotekhnika), 1980, 34-35 (02): : 95 - 96
- [38] METHOD OF ESTIMATING THE RECOMBINATION PROPERTIES OF CONTACTS AND OF THEIR EFFECT ON THE CHARACTERISTICS OF SEMICONDUCTOR DIODES. Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika), 1982, 27 (02): : 156 - 161
- [39] V-GROOVED-SUBSTRATE BURIED HETEROSTRUCTURE InGaAsP/InP LASER DIODES. Fujitsu Scientific and Technical Journal, 1982, 18 (04): : 541 - 561