共 50 条
- [41] THERMAL ANNEALING EFFECT OF ALAS-GAAS SUPERLATTICE GROWN AT 300-DEGREES-C BY MIGRATION-ENHANCED EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L2015 - L2018
- [45] PHOTOLUMINESCENCE OF GERMANIUM-DOPED ALAS-GAAS SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 987 - &
- [46] HETEROSTRUCTURES IN ALAS-GAAS, SYSTEM, OBTAINED BY SELECTIVE LIQUID EPITAXIS ZHURNAL TEKHNICHESKOI FIZIKI, 1978, 48 (02): : 352 - 361
- [47] PREPARATION OF ALLOYED ALAS-GAAS HETEROJUNCTIONS AND INVESTIGATION OF THEIR ELECTRICAL PROPERTIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1087 - +
- [48] Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 329 - 332
- [50] TIGHT-BINDING CALCULATION FOR ALAS-GAAS (100) INTERFACE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1456 - 1458