Monolithic Integrated Pair of Field-Effect Transistors with Controlling p-n Junction.

被引：0
|
作者：
Voronov, S.A.
Kozlov, Yu.G.
Ozhogin, M.A.
机构：
来源：
Izvestiya Vysshikh Uchebnykh Zavedenij. Radioelektronika | 1976年 / 19卷 / 12期
关键词：
INTEGRATED CIRCUITS; MONOLITHIC; -; Manufacture;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The principal steps associated with the manufacture of a monolithic pair of field-effect transistors with a controlling p-n junction are considered. Important parameters of the obtained devices are tabulated and discussed.
引用
收藏
页码：75 / 77
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