High breakdown voltage InAlAs/InGaAs high electron mobility transistors on GaAs with wide recess structure

被引：0

作者：

Higuchi, Katsuhiko ^{[1
]}

Matsumoto, Hidetoshi ^{[1
]}

Mishima, Tomoyoshi ^{[1
]}

Nakamura, Tohru ^{[1
]}

机构：

[1] Central Research Lab., Hitachi Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 2 B期

关键词：

Theoretical; (THR);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Both an off-state breakdown voltage between a gate and a drain (BVgd) and maximum frequency of oscillation (fmax) are described as functions of the width of gate recess in an InAlAs/InGaAs high electron mobility transistor (HEMT), using a new analysis model. The model suggests that the wide recess structure can improve both BVgd and fmax, which is experimentally confirmed. We fabricated InAlAs/InGaAs HEMTs lattice-mismatched to GaAs substrates with optimum recess width, and these exhibited both a high BVgd of 14 V and a high fmax of 127 GHz at a gate length of 0.66 μm.

引用

页码：1178 / 1181

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