共 50 条
- [42] Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 293 - 297
- [43] KINETICS OF DOPANT INCORPORATION USING A LOW-ENERGY ANTIMONY ION-BEAM DURING GROWTH OF SI(100) FILMS BY MOLECULAR-BEAM EPITAXY PHYSICAL REVIEW B, 1989, 40 (15): : 10449 - 10459
- [44] Beam flux dependence of ion-irradiation-induced porous structures in III-V compound semiconductors RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2013, 168 (04): : 247 - 252
- [45] X-ray diffractometer for studies on molecular-beam-epitaxy growth of III-V semiconductors JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (10): : 6247 - 6251
- [46] A DUAL-SOURCE LOW-ENERGY MASS-ANALYZED ION-BEAM SYSTEM FOR SEMICONDUCTOR EPITAXY AND NOVEL MATERIALS GROWTH NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 312 - 315
- [48] HETEROEPITAXIAL TIN FILM GROWTH ON SI(111) BY LOW-ENERGY REACTIVE ION-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A): : 3266 - 3270
- [49] High-crystallinity Sr1-xCuOy films grown by molecular beam epitaxy using a mass-separated low-energy O+ beam Jpn J Appl Phys Part 2 Letter, 9 B (L1202-L1204):
- [50] CONSTRUCTION AND APPLICATIONS OF A DUAL MASS-SELECTED LOW-ENERGY ION-BEAM SYSTEM REVIEW OF SCIENTIFIC INSTRUMENTS, 1991, 62 (10): : 2322 - 2325