共 50 条
- [1] A MOLECULAR AND ION-BEAM EPITAXY SYSTEM FOR THE GROWTH OF III-V-COMPOUND SEMICONDUCTORS USING A MASS-SEPARATED, LOW-ENERGY GROUP-V ION-BEAM JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09): : 1130 - 1140
- [2] MOLECULAR-BEAM EPITAXY OF GAAS USING A MASS-SEPARATED, LOW-ENERGY AS+ ION-BEAM JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 554 - 559
- [3] LOW-ENERGY MASS-SEPARATED ION-BEAM DEPOSITION OF MATERIALS NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 241 - 250
- [6] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF III-V COMPOUND SEMICONDUCTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 454 - 457
- [7] FINELY FOCUSED ION-BEAM TECHNOLOGY IN III-V COMPOUND SEMICONDUCTORS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 381 - 387
- [9] Temperature dependence of ion-beam mixing in III-V semiconductors Journal of Applied Physics, 1995, 77 (07):