Depth analysis of oxygen and gold in thin film semiconductor structures using RBS, AES, SIMS and resonant scattering

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作者：
Ras, H.A. [1 ]
Pretorius, R. [1 ]
机构：
[1] Univ of Stellenbosch, South Africa
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1988年 / B35卷 / 3-4期
关键词：
Depth Analysis - RBS Depth Profiling - Resonant Scattering - Rutherford Backscattering - Silicide Formation - SIMS Analysis;
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页码：488 / 494
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