Passivation of GaAs and InP with Amorphous Silicon.

被引:0
|
作者
Loualiche, S. [1 ]
Vaudry, C. [1 ]
Henry, L. [1 ]
Chaplain, R. [1 ]
机构
[1] CNET, Lannion, Fr, CNET, Lannion, Fr
来源
Vide, les Couches Minces | 1986年 / 41卷 / 231期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:215 / 216
相关论文
共 50 条
  • [21] SPIN-LATTICE RELAXATION IN AMORPHOUS SILICON.
    Bugai, A.A.
    Zaritskii, I.M.
    Konchits, A.A.
    Lysenko, V.S.
    1600, (26):
  • [22] NEW TYPE OF ELECTRON TRANSPORT IN AMORPHOUS SILICON.
    Andreev, A.A.
    Kon'kov, O.I.
    Tkachenko, B.K.
    Florinskii, V.Yu.
    1600, (17):
  • [23] XEROGRAPHIC MEASUREMENTS IN COMPENSATED HYDROGENATED AMORPHOUS SILICON.
    Jansen, F.
    Mort, J.
    Grammatica, S.
    Morgan, M.
    1600, (55):
  • [24] DENSITY OF STATES IN THE ENERGY GAP OF AMORPHOUS SILICON.
    Xia Jianbai
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (06): : 515 - 525
  • [25] SOME NEW FABRICATION TECHNOLOGIES OF AMORPHOUS SILICON.
    Hirose, Masataka
    Japan Annual Reviews in Electronics, Computers & Telecommunications: Amorphous Semiconductor Techn, 1981, : 34 - 51
  • [26] TRANSPORT AND THE ELECTRONIC STRUCTURE OF HYDROGENATED AMORPHOUS SILICON.
    Silver, M.
    Adler, D.
    Shaw, M.P.
    Cannella, V.
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1986, 53 (4 pt 2):
  • [27] EFFECT OF DEPOSITION CONDITIONS ON THE PROPERTIES OF AMORPHOUS SILICON.
    Bahl, S.K.
    Bhagat, S.M.
    Glosser, R.
    1600, Taylor & Francis Ltd, London, Engl
  • [28] Thin Film Solar Cells of Amorphous Silicon.
    Kruehler, W.
    Metall, 1985, 39 (08): : 729 - 733
  • [29] ELECTRON CORRELATION ENERGIES IN HYDROGENATED AMORPHOUS SILICON.
    Stutzmann, M.
    Jackson, W.B.
    Street, R.A.
    Biegelsen, D.K.
    1987,
  • [30] Hydrogen passivation of dopants in amorphous silicon
    Pietruszko, SM
    Pachocki, M
    Jang, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 73 - 76