Passivation of GaAs and InP with Amorphous Silicon.

被引：0

作者：

Loualiche, S. ^{[1
]}

Vaudry, C. ^{[1
]}

Henry, L. ^{[1
]}

Chaplain, R. ^{[1
]}

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

Vide, les Couches Minces | 1986年 / 41卷 / 231期

关键词：

D O I：

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摘要：

引用

页码：215 / 216

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[1] PASSIVATION OF GAAS AND INP WITH AMORPHOUS SILICIUM
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[3] GaAs ON SILICON.
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[5] On precipitated amorphous silicon.
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[8] APPLICATIONS AND DEFECTS IN AMORPHOUS SILICON.
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[9] DEVICE APPLICATION OF AMORPHOUS SILICON.
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[10] STRUCTURE OF THE NATURAL OXIDE OF AMORPHOUS SILICON.
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