On the theory of optical gain of strained-layer hexagonal and cubic GaN quantum-well lasers

被引：0
|
作者：
Ahn, Doyeol [1 ]
Park, Seoung-Hwan [1 ]
机构：
[1] Seoul City Univ, Seoul, Korea, Republic of
来源：
| 1996年 / JJAP, Minato-ku, Japan卷 / 35期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Quantum well lasers
引用
收藏
相关论文
共 50 条
  • [31] STRAINED-LAYER MULTIPLE QUANTUM-WELL DISTRIBUTED BRAGG REFLECTOR LASERS WITH A FAST MONITORING PHOTODIODE
    KOREN, U
    MILLER, BI
    YOUNG, MG
    CHIEN, M
    GNAUCK, AH
    MAGILL, PD
    WOODWARD, SL
    BURRUS, CA
    APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1239 - 1240
  • [32] VARIATION OF THRESHOLD CURRENT WITH CAVITY LENGTH IN STRAINED-LAYER INGAAS/GAAS QUANTUM-WELL LASERS
    LEE, J
    SHIEH, C
    VASSELL, MO
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) : 1882 - 1891
  • [33] STIMULATED EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES.
    Camras, M.D.
    Brown, J.M.
    Holonyak Jr., N.
    Nixon, M.A.
    Kaliski, R.W.
    Ludowise, M.J.
    Dietze, W.T.
    Lewis, C.R.
    1600, (54):
  • [34] Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin-orbit coupling
    Ahn, D
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7731 - 7737
  • [35] OPERATION OF STRAINED-LAYER (IN,GA)AS QUANTUM-WELL LASERS PREPARED ON (112)B GAAS SUBSTRATE
    SUN, D
    TOWE, E
    ELECTRONICS LETTERS, 1994, 30 (06) : 497 - 499
  • [36] 0.98-MU-M STRAINED-LAYER GAINAS/GAINASP/GAINP QUANTUM-WELL LASERS
    ZHANG, G
    NAPPI, J
    OVTCHINNIKOV, A
    SAVOLAINEN, P
    ASONEN, H
    ELECTRONICS LETTERS, 1992, 28 (23) : 2171 - 2172
  • [37] OMVPE GROWTH OF STRAINED-LAYER INGAAS/ALGAAS HETEROSTRUCTURES FOR QUANTUM-WELL DIODE-LASERS
    WANG, CA
    CHOI, HK
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (07) : 47 - 48
  • [38] ISSUES IN THE REALIZATION OF STRAINED-LAYER QUANTUM-WELL OPTOELECTRONIC DEVICES
    MYERS, DR
    OPTICAL AND QUANTUM ELECTRONICS, 1991, 23 (07) : S985 - S994
  • [39] INGAAS-ALGAAS-GAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE SQUARE RING LASERS
    HAN, H
    FORBES, DV
    COLEMAN, JJ
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1995, 31 (11) : 1994 - 1997
  • [40] ROLE OF GROWTH TEMPERATURE IN GSMBE GROWTH OF STRAINED-LAYER INGAAS/GAAS QUANTUM-WELL LASERS
    ZHANG, G
    OVTCHINNIKOV, A
    PESSA, M
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 209 - 212
12345