Analytical model for the surface field distribution of SOI RESURF devices

被引：0
|
作者：
Ajou Univ, Suwon-City, Korea, Republic of [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 6卷 / 1374-1376期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Analytical model for the surface field distribution of SOI RESURF devices
    Chung, SK
    Han, SY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) : 1374 - 1376
  • [2] A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devices
    He, J
    Zhang, X
    Wang, YY
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2002, 89 (02) : 111 - 122
  • [3] Analytical model for the electric field distribution in SOI RESURF and TMBS structures
    Merchant, S
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) : 1264 - 1267
  • [4] Novel analytical model for surface electric field distribution and optimization of TFSOI RESURF devices
    He, Jin
    Zhang, Xing
    Huang, Ru
    Wang, Yang-Yuan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (04): : 402 - 408
  • [5] Analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices
    Li, Qi
    Li, Zhaoji
    Zhang, Bo
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2006, 27 (07): : 1177 - 1182
  • [6] A concise analytical model for the surface field distribution of TFSOI RESURF devices including interface charge effect
    He, J
    Zhang, X
    Huang, R
    Wang, YY
    CHINESE JOURNAL OF ELECTRONICS, 2002, 11 (01): : 66 - 70
  • [7] A new two dimensional analytical breakdown model of SOI RESURF devices
    Guo, Yufeng
    Li, Zhaoji
    Zhang, Bo
    2007 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2: VOL 1: COMMUNICATION THEORY AND SYSTEMS; VOL 2: SIGNAL PROCESSING, COMPUTATIONAL INTELLIGENCE, CIRCUITS AND SYSTEMS, 2007, : 1278 - +
  • [8] An analytical model for breakdown voltage of surface implanted SOI RESURF LDMOS
    Chung, SK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (05) : 1006 - 1009
  • [9] Analytical model of surface field distribution and breakdown voltage for RESURF LDMOS transistor
    He, Jin
    Zhang, Xing
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1102 - 1106
  • [10] An analytical model for interaction of SIPOS layer with underlying silicon of SOI RESURF devices
    Chung, SK
    Shin, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1804 - 1807
12345