Analytical model for the surface electrical field distribution and optimization of bulk-silicon double RESURF devices

被引：0
|
作者：
Li, Qi [1 ]
Li, Zhaoji [1 ]
Zhang, Bo [1 ]
机构：
[1] IC Design Center, University of Electronic Science and Technology of China, Chengdu 610054, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2006年 / 27卷 / 07期
关键词：
D O I：
10.1016/j.phytochem.2006.05.013
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1177 / 1182
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