High-density layer at the SiO2/Si interface observed by difference X-ray reflectivity

被引：0
|
作者：
Awaji, Naoki [1 ]
Ohkubo, Satoshi [1 ]
Nakanishi, Toshiro [1 ]
Sugita, Yoshihiro [1 ]
Takasaki, Kanetake [1 ]
Komiya, Satoshi [1 ]
机构：
[1] Fujitsu Lab Ltd, Atsugi, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1996年 / 35卷 / 1 B期
关键词：
D O I：
10.1143/jjap.35.l67
中图分类号：
学科分类号：
摘要：
14
引用
收藏
相关论文
共 50 条
  • [31] Grazing incidence X-ray photoemission spectroscopy of SiO2 on Si
    Jach, T
    Gormley, J
    Thurgate, S
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1999, 54 (10) : 1539 - 1544
  • [32] X-ray reflectivity study of the structural properties of SiO2 and SiOF thin films
    Ceriola, G
    Iacona, F
    La Via, F
    Raineri, V
    Bontempi, E
    Depero, LE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (12) : F221 - F226
  • [33] DETERMINATION OF THE THICKNESS OF SIO2 LAYERS ON SI BY X-RAY SPECTROMETRY
    EBEL, MF
    EBEL, H
    WERNISCH, J
    X-RAY SPECTROMETRY, 1980, 9 (02) : 66 - 69
  • [34] X-RAY K ABSORPTION-SPECTRA OF SILICON IN SI, SIO AND SIO2
    SENEMAUD, C
    COSTALIM.MT
    ROGER, JA
    CACHARD, A
    CHEMICAL PHYSICS LETTERS, 1974, 26 (03) : 431 - 433
  • [35] NIST CHARACTERIZES SI/SIO2 INTERFACE LAYER
    DERBYSHIRE, K
    SOLID STATE TECHNOLOGY, 1994, 37 (08) : 26 - +
  • [36] Strain field observed at the SiO2/Si(111) interface
    Emoto, T
    Akimoto, K
    Ichimiya, A
    SURFACE SCIENCE, 1999, 438 (1-3) : 107 - 115
  • [37] Atomistic characterization of the SiO2 high-density liquid/low-density liquid interface
    Zhang, Xin
    Laird, Brian B.
    Liang, Hongtao
    Lu, Wenliang
    Yu, Zhiyong
    Ma, Xiangming
    Cheng, Ya
    Yang, Yang
    JOURNAL OF CHEMICAL PHYSICS, 2022, 157 (13):
  • [38] Characterization of a HfO2/SiO2/Si system by X-ray reflection and X-ray emission spectroscopies
    André, JM
    Filatova, EO
    Renault, O
    Damlencourt, JF
    Martin, F
    Jonnard, P
    SURFACE AND INTERFACE ANALYSIS, 2006, 38 (04) : 777 - 780
  • [39] Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy
    Stenger, I.
    Gallas, B.
    Siozade, L.
    Fisson, S.
    Vuye, G.
    Chenot, S.
    Rivory, J.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 38 (1-2): : 176 - 180
  • [40] Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering
    Cundiff, ST
    Knox, WH
    Baumann, FH
    EvansLutterodt, KW
    Tang, MT
    Green, ML
    vanDriel, HM
    APPLIED PHYSICS LETTERS, 1997, 70 (11) : 1414 - 1416
12345