Control of orientation of Pb(Zr, Ti)O3 thin films using PbTiO3 buffer layer

被引:0
|
作者
机构
[1] Shimizu, Masaru
[2] Sugiyama, Masataka
[3] Fujisawa, Hironori
[4] Shiosaki, Tadashi
来源
Shimizu, Masaru | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词
Ferroelectric materials;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Orientation controlled deposition of Pb(Zr,Ti)O3 films using a micron-size patterned SrRuO3 buffer layer
    Nishida, Ken
    Yamamoto, Takashi
    Osada, Minoru
    Sakata, Osami
    Kimura, Shigeru
    Saito, Keisuke
    Nishide, Masamichi
    Katoda, Takashi
    Yokoyama, Shintaro
    Funakubo, Hiroshi
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (19) : 5339 - 5344
  • [42] Dielectric properties of sol-gel derived Pb(Zr0.70Ti 0.30)O3/PbTiO3 and Pb(Zr0.70Ti 0.30)O3/BaTiO3 multilayer thin films
    Zou, Qin
    Ruda, Harry
    Yacobi, Ben G.
    Farrell, Mark
    Ferroelectrics, 2001, 260 (01) : 137 - 142
  • [43] Dielectric properties of sol-gel derived Pb(Zr0.70Ti0.30)O3/PbTiO3 and Pb(Zr0.70Ti0.30)O3/BaTiO3 multilayer thin films
    Zou, Q
    Ruda, H
    Yacobi, BG
    Farrell, M
    FERROELECTRICS, 2001, 260 (1-4) : 481 - 486
  • [44] High Temperature Durability Improvement of PbTiO3/Pb(Zr,Ti)O3 Ultrasonic Transducers
    Hirakawa, Kohei
    Hidaka, Makie
    Kambayashi, Naoki
    Kobayashi, Makiko
    INTERNATIONAL ULTRASONICS SYMPOSIUM (IEEE IUS 2021), 2021,
  • [45] Pyroelectric and transient current properties of multilayer Pb1.1(Zr0.3Ti0.7)O3/PbTiO3 and Pb1.1(Zr0.3Ti0.7)O3 thin films
    Kang, SH
    Lee, HJ
    Kim, JS
    Kim, IW
    Park, EC
    Lee, JS
    Yi, SS
    FERROELECTRICS, 2005, 328 : 47 - 51
  • [46] Comparison study on sol-gel Pb(Zr0.3Ti0.7)O3 and Pb(Zr0.3Ti0.7)O3/PbTiO3 multilayer thin films for pyroelectric infrared detectors
    Sun, LL
    Tan, OK
    Liu, WG
    Chen, XF
    Zhu, W
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 738 - 744
  • [47] Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation
    Dekkers, Matthijn
    Nguyen, Minh D.
    Steenwelle, Ruud
    Riele, Paul M. te
    Blank, Dave H. A.
    Rijnders, Guus
    APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [48] Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3/PbO bridge layer
    Xiao, Bo
    Gu, Xing
    Izyumskaya, Natalia
    Avrutin, Vitaliy
    Xie, Jinqiao
    Liu, Huiyong
    Morkoc, Hadis
    APPLIED PHYSICS LETTERS, 2007, 91 (18)
  • [49] PROPERTIES OF SPUTTER-DEPOSITED PBTIO3, PB(ZR,TI)O3, PB2KNB5O15 FILMS
    SHIOSAKI, T
    ADACHI, M
    MOCHIZUKI, S
    KAWABATA, A
    FERROELECTRICS, 1985, 63 (1-4) : 227 - 234
  • [50] Improving fatigue resistance of Pb(Zr,Ti)O3 thin films by using PbZrO3 buffer layers
    Alkoy, EM
    Uchiyama, K
    Shiosaki, T
    Alkoy, S
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)