Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films

被引：0
|
作者：
机构：
[1] Iacona, Fabio
[2] Bongiorno, Corrado
[3] Spinella, Corrado
[4] Boninelli, Simona
[5] Priolo, Francesco
来源：
Iacona, F. (fabio.iacona@imm.cnr.it) | 1600年 / American Institute of Physics Inc.卷 / 95期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [41] Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing
    Cen, Z. H.
    Chen, T. P.
    Ding, L.
    Liu, Y.
    Wong, J. I.
    Yang, M.
    Liu, Z.
    Goh, W. P.
    Zhu, F. R.
    Fung, S.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
  • [42] Formation and oxidation of Si nanoclusters in Er-doped Si-rich SiOx -: art. no. 096108
    Pi, XD
    Zalloum, OHY
    Wojcik, J
    Knights, AP
    Mascher, P
    Todd, ADW
    Simpson, PJ
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
  • [43] FORMATION OF STABLE MOSI2/POLY-SI FILMS BY RAPID THERMAL ANNEALING
    PORTIUS, R
    DIETRICH, D
    HASSNER, A
    RASCHKE, T
    WIESER, E
    WOLKE, W
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 100 (01): : 199 - 206
  • [44] Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
    V. A. Dan’ko
    I. Z. Indutnyi
    V. S. Lysenko
    I. Yu. Maidanchuk
    V. I. Min’ko
    A. N. Nazarov
    A. S. Tkachenko
    P. E. Shepelyavyi
    Semiconductors, 2005, 39 : 1197 - 1203
  • [45] Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
    Dan'ko, VA
    Indutnyi, IZ
    Lysenko, VS
    Maidanchuk, IY
    Min'ko, VI
    Nazarov, AN
    Tkachenko, AS
    Shepelyavyi, PE
    SEMICONDUCTORS, 2005, 39 (10) : 1197 - 1203
  • [46] Ellipsometric study on the formation of nanocomposites by annealing SiOx films in oxygen-containing media
    Sopinskii N.V.
    Russu A.V.
    Optoelectronics, Instrumentation and Data Processing, 2015, 51 (4) : 423 - 427
  • [47] Dynamics of Si plume produced by laser ablation in ambient inert gas and formation of Si nanoclusters
    Murakami, K
    Makimura, T
    Ono, N
    Sakuramoto, T
    Miyashita, A
    Yoda, O
    APPLIED SURFACE SCIENCE, 1998, 127 : 368 - 372
  • [48] The role of excess Si content on the number of Si-nanoclusters/Er ions couplings of Er doped SiOx thin films
    Seo, S. -Y.
    Jambois, O.
    Pellegrino, P.
    Garrido, B.
    Gourbilleau, F.
    Rizk, R.
    2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2007, : 102 - +
  • [49] Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys:: model systems for advanced device processing
    Wolfe, DM
    Lucovsky, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 : 1009 - 1014
  • [50] Understanding the formation and evolution of interdiffusion grown organolead halide perovskite thin films by thermal annealing
    Bi, Cheng
    Shao, Yuchuan
    Yuan, Yongbo
    Xiao, Zhengguo
    Wang, Chenggong
    Gao, Yongli
    Huang, Jinsong
    JOURNAL OF MATERIALS CHEMISTRY A, 2014, 2 (43) : 18508 - 18514
12345