Plasma damage-free SiO2 deposition for low-temperature poly-Si AMLCDs

被引：0
|
作者：
Xu, Ge
Kumagai, Akila
Ishibashi, Keiji
Nogami, Hiroshi
Tanaka, Masahiko
Tanabe, Hiroshi
Okada, Osamu
机构：
[1] ANELVA Corp., Process Development Laboratory, 5-8-1, Yotsuya, Fuchu-shi, Tokyo 183, Japan
[2] NEC Corp., Funct. Devices Research Laboratories, 4-1-1, Miyazaki, Miyamae-ku, Kawasaki, Kanagawa, 216-8555, Japan
来源：
Journal of the Society for Information Display | 2001年 / 9卷 / 03期
关键词：
D O I：
10.1889/1.1828786
中图分类号：
学科分类号：
摘要：
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页码：181 / 184
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