In situ RHEED characterization of surface lattice strain relaxation processes at the initial stages of heteroepitaxial growth

被引：0
|
作者：
Yao, Takafumi
机构：
来源：
Denshi Gijutsu Sogo Kenkyusho Iho/Bulletin of the Electrotechnical Laboratory | 1992年 / 56卷 / 01期
关键词：
24;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：67 / 73
相关论文
共 50 条
  • [1] Surface lattice strain relaxation at the initial stage of heteroepitaxial growth of InxGa1-xAs on GaAs by molecular beam epitaxy
    Nakao, Hiroshi, 1600, (28):
  • [2] SURFACE LATTICE STRAIN RELAXATION AT THE INITIAL-STAGE OF HETEROEPITAXIAL GROWTH OF INXGA1-XAS ON GAAS BY MOLECULAR-BEAM EPITAXY
    NAKAO, H
    YAO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (03): : L352 - L355
  • [3] Effect of asymmetric strain relaxation on dislocation relaxation processes in heteroepitaxial semiconductors
    Andersen, D.
    Hull, R.
    JOURNAL OF APPLIED PHYSICS, 2017, 121 (07)
  • [4] Temperature Effects in the Initial Stages of Heteroepitaxial Film Growth
    To, Tung B. T.
    Reis, Fabio D. A. Aarao
    SURFACES, 2022, 5 (02): : 251 - 264
  • [5] Strain relaxation in heteroepitaxial Si1-xGex films via surface roughening processes
    Ozkan, CS
    Nix, WD
    Gao, HJ
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 407 - 412
  • [6] STRAIN RELAXATION DURING THE INITIAL-STAGES OF GROWTH IN GE/SI(001)
    WILLIAMS, AA
    THORNTON, JMC
    MACDONALD, JE
    VANSILFHOUT, RG
    VANDERVEEN, JF
    FINNEY, MS
    JOHNSON, AD
    NORRIS, C
    PHYSICAL REVIEW B, 1991, 43 (06): : 5001 - 5011
  • [7] INITIAL-STAGES OF HETEROEPITAXIAL GROWTH OF INAS ON SI (100)
    OOSTRA, DJ
    SMILGYS, RV
    LEONE, SR
    APPLIED PHYSICS LETTERS, 1989, 55 (13) : 1333 - 1335
  • [8] A RHEED STUDY OF THE INITIAL GROWTH OF AG ON THE SI(001) SURFACE
    NISHIMORI, K
    TOKUTAKA, H
    TAMON, T
    KISHIDA, S
    ISHIHARA, N
    SURFACE SCIENCE, 1991, 242 (1-3) : 157 - 161
  • [9] In situ optical characterization of carbon layers formed in the initial stages of diamond growth
    Cent Natl de la Recherche, Scientifique, Grenoble, France
    Thin Solid Films, 1-2 (260-263):
  • [10] In situ optical characterization of carbon layers formed in the initial stages of diamond growth
    Longueville, JL
    Moulin, S
    Bonnot, AM
    THIN SOLID FILMS, 1996, 281 : 260 - 263
12345