MECHANISM OF INFLUENCE OF RARE-EARTH ELEMENTS ON PROPERTIES OF GaAs LAYERS GROWN USING LIQUID EPITAXY.

被引：0
|
作者：
Bespalov, V.A.
Elkin, A.G.
Zhurkin, B.G.
Kvit, A.V.
Oktyabrskii, S.R.
Perezhozin, G.A.
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来源：
Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik Kratkie Soobshcheniya p | 1987年 / 09期
关键词：
PHOTOLUMINESCENCE - RARE EARTH ELEMENTS;
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摘要：
The mechanism of the influence of lanthanides on the properties of GaAs layers grown through liquid epitaxy is studied using electro-physical methods, radioisotopic analysis, and photoluminescence at a temperature of 4. 2 K. The addition of Gd and Yb to the molten solution leads to a reduction in the concentration of residual donors which is associated with the formation of chemical compounds with elements of the VI group, which are forced back into the second phase.
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页码：41 / 44
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