MECHANISM OF INFLUENCE OF RARE-EARTH ELEMENTS ON PROPERTIES OF GaAs LAYERS GROWN USING LIQUID EPITAXY.

被引：0
|
作者：
Bespalov, V.A.
Elkin, A.G.
Zhurkin, B.G.
Kvit, A.V.
Oktyabrskii, S.R.
Perezhozin, G.A.
机构：
来源：
Soviet Physics - Lebedev Institute Reports (English Translation of Sbornik Kratkie Soobshcheniya p | 1987年 / 09期
关键词：
PHOTOLUMINESCENCE - RARE EARTH ELEMENTS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The mechanism of the influence of lanthanides on the properties of GaAs layers grown through liquid epitaxy is studied using electro-physical methods, radioisotopic analysis, and photoluminescence at a temperature of 4. 2 K. The addition of Gd and Yb to the molten solution leads to a reduction in the concentration of residual donors which is associated with the formation of chemical compounds with elements of the VI group, which are forced back into the second phase.
引用
收藏
页码：41 / 44
相关论文
共 50 条
  • [1] THIN GaAs LAYERS GROWN BY LIQUID PHASE EPITAXY.
    Piskorski, M.
    Electron Technology (Warsaw), 1973, 6 (1-2): : 115 - 124
  • [2] Photodetectors on base of AlGaAs/GaAs heterostructures grown by liquid phase epitaxy using rare-earth additions
    Venger, EF
    Semenova, GN
    Kryshtab, TG
    Svitelskiy, AV
    Lytvyn, PM
    Krukovskii, SI
    CAS '96 PROCEEDINGS - 1996 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 19TH EDITION, VOLS 1 AND 2, 1996, : 607 - 610
  • [3] OPTICAL CHARACTERIZATION OF GaAs LAYERS GROWN BY VAPOUR PHASE EPITAXY.
    Warrier, A.V.R.
    Chandra, Ishwar
    Jain, B.P.
    Abha
    Indian Journal of Pure and Applied Physics, 1979, 17 (06): : 354 - 356
  • [4] Effect of rare earth addition on GaAs-based layers grown by liquid phase epitaxy
    Krukovsky, SI
    Popov, VM
    Savkina, RK
    Smirnov, AB
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 27 (1-3): : 177 - 179
  • [5] PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE OF RARE-EARTH (YB)-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
    UEKUSA, S
    MAJIMA, A
    ACTA POLYTECHNICA SCANDINAVICA-APPLIED PHYSICS SERIES, 1990, (170): : 253 - 256
  • [6] LPE InP layers grown in the presence of rare-earth elements
    Procházková, O
    Zavadil, J
    Zdánsky, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 14 - 17
  • [7] Properties of GaSb Layers Doped with Rare-Earth Elements during Liquid-Phase Epitaxy from Sn Fluxes
    Arbenina, V. V.
    Dmitrieva, G. S.
    Daricheva, O. E.
    International Polymer Processing, 1995, 10 (01)
  • [8] PROPERTIES OF GASB LAYERS DOPED WITH RARE-EARTH ELEMENTS DURING LIQUID-PHASE EPITAXY FROM SN FLUXES
    ARBENINA, VV
    DMITRIEVA, GS
    DARICHEVA, OE
    INORGANIC MATERIALS, 1995, 31 (02) : 160 - 163
  • [9] INDIUM ISOELECTRONIC DOPING INFLUENCE ON ETCH PIT DENSITY IN GaAs LAYERS GROWN BY VAPOUR PHASE EPITAXY.
    Lopez Coronado, M.
    Abril, E.J.
    Aguilar, M.
    Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (11): : 899 - 901
  • [10] HIGHLY UNIFORM GaAs AND AlGaAs EPITAXIAL LAYERS GROWN BY MOLECULAR BEAM EPITAXY.
    Saito, Junji
    Shibatomi, Akihiro
    Fujitsu Scientific and Technical Journal, 1985, 21 (02): : 190 - 197
12345