Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal-ferroelectric-nitride-oxide-semiconductor structure

被引：0
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作者：
Noda, M. [1 ]
Adachi, Y. [1 ]
Sugiyama, H. [1 ]
Nakaiso, T. [1 ]
Okuyama, M. [1 ]
机构：
[1] Department of Physical Science, Grad. School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
来源：
| 2000年 / Springer-Verlag GmbH & Company KG, Berlin, Germany卷 / 71期
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摘要：
Thin films
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