Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal-ferroelectric-nitride-oxide-semiconductor structure

被引：0
|
作者：
Noda, M. [1 ]
Adachi, Y. [1 ]
Sugiyama, H. [1 ]
Nakaiso, T. [1 ]
Okuyama, M. [1 ]
机构：
[1] Department of Physical Science, Grad. School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
来源：
| 2000年 / Springer-Verlag GmbH & Company KG, Berlin, Germany卷 / 71期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films
引用
收藏
相关论文
共 50 条
  • [1] Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal-ferroelectric-nitride-oxide-semiconductor structure
    Noda, M
    Adachi, Y
    Sugiyama, H
    Nakaiso, T
    Okuyama, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (01): : 113 - 116
  • [2] Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to a metal–ferroelectric–nitride–oxide–semiconductor structure
    M. Noda
    Y. Adachi
    H. Sugiyama
    T. Nakaiso
    M. Okuyama
    Applied Physics A, 2000, 71 (1) : 113 - 116
  • [3] Low-temperature preparation of SrxBi2+yTa2O9 ferroelectric thin film by pulsed laser deposition and its application to metal-ferroelectric-insulator-semiconductor structure
    Okuyama, M
    Sugiyama, H
    Noda, M
    APPLIED SURFACE SCIENCE, 2000, 154 : 411 - 418
  • [4] A low-temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure
    Okuyama, M
    Noda, M
    Yamashita, K
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 1999, 2 (03) : 239 - 245
  • [5] Low-temperature preparation of SrBi2Ta2O9 ferroelectric thin film by pulsed laser deposition and its application to metal-ferroelectric-insulator-semiconductor structure with nitride buffer layers
    Okuyama, M
    Sugiyama, H
    Nakaiso, T
    Noda, M
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 603 - 608
  • [6] Low-temperature preparation and characterization of SrxBi2+yTa2O9/SiO2/Si structure for MFOS memory FET
    Osaka Univ, Osaka, Japan
    IEEE Int Symp Appl Ferroelectr, (59-62):
  • [7] A study on a metal-ferroelectric-oxide-semiconductor structure with thin silicon oxide film using SrBi2Ta2O9 ferroelectric films prepared by pulsed laser deposition
    Noda, M
    Sugiyama, H
    Okuyama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5432 - 5436
  • [8] Low-temperature preparation of ferroelectric Sr2(Ta1-x,Nbx)2O7 thin films by pulsed laser deposition and their application to metal-ferroelectric-insulator-semiconductor-FET
    Nakaiso, T
    Noda, M
    Okuyama, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (4B): : 2935 - 2939
  • [9] Low temperature preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure
    Noda, Minoru
    Matsumuro, Yoshinori
    Sugiyama, Hideki
    Okuyama, Masanori
    Ferroelectrics, Letters Section, 1999, 26 (01): : 17 - 28
  • [10] A low temperature preparation of Sr0.7Bi2+xTa2O9 thin films on SiO2/Si by pulsed laser deposition for application of metal-ferroelectric-insulator-semiconductor structure
    Noda, M
    Matsumuro, Y
    Sugiyama, H
    Okuyama, M
    FERROELECTRICS LETTERS SECTION, 1999, 26 (1-2) : 17 - 28
12345