Formation and remove mechanism of haze defects on (111) p-type silicon wafers

被引：0
|
作者：
Xu, Yuesheng [1 ]
Li, Yangxian [1 ]
Liu, Caichi [1 ]
Ju, Yulin [1 ]
Tang, Jian [1 ]
Zhu, Zeshao [1 ]
机构：
[1] Hebei Inst of Technology, Tianjin, China
来源：
Rare Metals | 1994年 / 13卷 / 01期
关键词：
Silicon;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：31 / 36
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