Complete Monte Carlo RF analysis of 'real' short-channel compound FET's

被引:0
|
作者
Univ of Glasgow, Glasgow, United Kingdom [1 ]
机构
来源
IEEE Trans Electron Devices | / 8卷 / 1644-1652期
关键词
Number:; -; Acronym:; EPSRC; Sponsor: Engineering and Physical Sciences Research Council;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects
    S. M. Jagtap
    Dr. V. J. Gond
    Semiconductors, 2021, 55 : 504 - 510
  • [32] Bulk Fin-FET Strategy at Distinct Nanometer Regime for Measurement of Short-Channel Effects
    Jagtap, S. M.
    Gond, V. J.
    SEMICONDUCTORS, 2021, 55 (05) : 504 - 510
  • [33] Analysis of Short-Channel Effects in Junctionless DG MOSFETs
    Xie, Qian
    Wang, Zheng
    Taur, Yuan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3511 - 3514
  • [34] MONTE-CARLO STUDY OF 50 NM-LONG SINGLE AND DUAL-GATE MODFETS - SUPPRESSION OF SHORT-CHANNEL EFFECTS
    DOLLFUS, P
    HESTO, P
    GALDIN, S
    BRISSET, C
    JOURNAL DE PHYSIQUE III, 1993, 3 (09): : 1719 - 1728
  • [35] Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel
    Gruzinskis, V.
    Shiktorov, P.
    Starikov, E.
    ACTA PHYSICA POLONICA A, 2011, 119 (02) : 215 - 217
  • [36] RF Linearity Performance Potential of Short-Channel Graphene Field-Effect Transistors
    Ul Alam, Ahsan
    Holland, Kyle David
    Wong, Michael
    Ahmed, Sabbir
    Kienle, Diego
    Vaidyanathan, Mani
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2015, 63 (12) : 3874 - 3887
  • [37] Monte Carlo Simulations in Real Options Analysis
    Spicar, Radim
    VISION 2020: SUSTAINABLE GROWTH, ECONOMIC DEVELOPMENT, AND GLOBAL COMPETITIVENESS, VOLS 1-5, 2014, : 2130 - 2139
  • [38] RF split capacitance-voltage measurements of short-channel and leaky MOSFET devices
    Andres, E. San
    Pantisano, L.
    Ramos, J.
    Severi, S.
    Trojman, L.
    De Gendt, S.
    Groeseneken, G.
    IEEE ELECTRON DEVICE LETTERS, 2006, 27 (09) : 772 - 774
  • [39] THRESHOLD BEHAVIOR OF SHORT-CHANNEL LDD MOSFET'S.
    Wang, Cheng T.
    IEEE Transactions on Electron Devices, 1987, ED-34 (02) : 452 - 454
  • [40] Characterization of nonlinear substrate resistance in short-channel MOSFET's
    Mihnea, A
    Georgescu, SS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (12) : 2177 - 2184