Effect of biaxial stress on the solid phase epitaxial crystallization of GexSi(1-x) films

被引:0
|
作者
Univ of Modena, Modena, Italy [1 ]
机构
来源
Jpn J Appl Phys Part 2 Letter | / 3 B卷 / L339-L342期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] HYDROTHERMAL CRYSTALLIZATION OF PB(TIXZR(1-X))O3 SOLID SOLUTIONS
    BARSUKOVA, ML
    KUZNETSO.VA
    LOBACHEV, AN
    LIDER, VV
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1971, 16 (01): : 178 - +
  • [32] GROWTH OF EPITAXIAL GEXSI1-X FOR INFRARED DETECTORS BY UHV/CVD
    VYAS, S
    GREVE, DW
    KNIGHT, TJ
    STRONG, RM
    MAHAJAN, S
    VACUUM, 1995, 46 (8-10) : 1065 - 1069
  • [34] CRYSTALLIZATION BEHAVIOR OF AMORPHOUS GE-(1-X)SB-X THIN-FILMS
    DELPOZO, JM
    HERRERO, MP
    DIAZ, L
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 185 (1-2) : 183 - 190
  • [35] THE EFFECT OF TEMPERATURE AND DOPING ON THE SEGREGATION OF IN DURING SOLID-PHASE-EPITAXIAL CRYSTALLIZATION OF SI
    ELLIMAN, RG
    FANG, ZW
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3313 - 3318
  • [36] Structural properties of the epitaxial (SiC)1-x (AlN) x solid solution films fabricated by magnetron sputtering of SiC-Al composite targets
    Ramazanov, Sh M.
    Kurbanov, M. K.
    Safaraliev, G. K.
    Bilalov, B. A.
    Kargin, N. I.
    Gusev, A. S.
    TECHNICAL PHYSICS LETTERS, 2014, 40 (04) : 300 - 302
  • [37] STRESS IN CERMET FILMS OF (FE-NI)1-X(SIO)X SYSTEM
    ZHIGALOV, VS
    FROLOV, GI
    FIZIKA METALLOV I METALLOVEDENIE, 1978, 45 (06): : 1289 - 1291
  • [38] Growth of epitaxial GexSi1-x for infrared detectors by UHV/CVD
    Carnegie Mellon Univ, Pittsburgh, United States
    Vacuum, 8-10 (1065-1069):
  • [39] THE FABRICATION OF EPITAXIAL GEXSI1-X LAYERS BY ION-IMPLANTATION
    ELLIMAN, RG
    WONG, WC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 768 - 772
  • [40] HIGH-TEMPERATURE PHOTOCONDUCTIVITY OF INDIUM-ALLOYED EPITAXIAL LAYERS OF PB(1-X)SNXTE(1-X)SEY SOLID-SOLUTION
    VODOPYANOV, VN
    KONDRATENKO, MM
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1994, 20 (23): : 73 - 75