Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

被引：0
|
作者：
Wasik, D. [1 ]
Dmowski, L. [1 ]
Mikucki, J. [1 ]
Lusakowski, J. [1 ]
Hsu, L. [1 ]
Walukiewicz, W. [1 ]
Bi, W.G. [1 ]
Tu, C.W. [1 ]
机构：
[1] Warsaw Univ, Warsaw, Poland
来源：
Materials Science Forum | 1997年 / 258-263卷 / pt 2期
关键词：
Charge transfer - Crystal impurities - Electric resistance - Electron sources - Hydrostatic pressure - Interfaces (materials) - Pressure effects - Semiconducting indium phosphide - Semiconductor device structures - Semiconductor doping - Semiconductor growth - Transport properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have measured the transport properties of InGaAs/InP heterostructures where donor-like native defects incorporated in a low temperature grown InP barrier are used as a source of electrons. Conductance of such structures shows comparable contributions from low mobility electrons in the InP barrier and from the two-dimensional electron gas (2DEG) at the heterostructure interface. We used high hydrostatic pressure to eliminate the low mobility conductance and were able to determine the parameters of two-dimensional electron gas. We find that the highest two-dimensional electron mobility of 3×104 cm2/Vs is determined by the scattering from the background ionized impurities located in the InGaAs quantum well.
引用
收藏
页码：813 / 818
相关论文
共 50 条
  • [31] Energy relaxation in two-dimensional electron GaS in InGaAs/InP via electron-acoustic phonon interaction
    Kreshchuk, AM
    Novikov, SV
    Savel'ev, IG
    Polyanskaya, TA
    Podor, B
    Remenyi, G
    Kovacs, G
    [J]. ACTA PHYSICA POLONICA A, 1998, 94 (03) : 415 - 420
  • [32] Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well
    Zhou, WZ
    Yao, W
    Zhu, B
    Qiu, ZJ
    Guo, SL
    Lin, T
    Cui, LJ
    Gui, YS
    Chu, JH
    [J]. ACTA PHYSICA SINICA, 2006, 55 (04) : 2044 - 2048
  • [33] DIMENSIONAL RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ALLEN, SJ
    STORMER, HL
    HWANG, JCM
    [J]. PHYSICAL REVIEW B, 1983, 28 (08) : 4875 - 4877
  • [34] ELECTRON TRANSPORT IN MODULATION-DOPED InAlAs/InGaAs/InAlAs AND AlGaAs/InGaAs/AlGaAs HETEROSTRUCTURES
    Pozela, J.
    Pozela, K.
    Juciene, V.
    Suziedelis, A.
    Zurauskiene, N.
    Shkolnik, A. S.
    [J]. LITHUANIAN JOURNAL OF PHYSICS, 2011, 51 (04): : 270 - 275
  • [35] Electron scattering in two-dimensional disordered heterostructures
    Gómez, I
    Diez, E
    Domínguez-Adame, F
    Orellana, P
    [J]. PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 307 - 311
  • [36] The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
    Protasov, D. Yu.
    Zhuravlev, K. S.
    [J]. SOLID-STATE ELECTRONICS, 2017, 129 : 66 - 72
  • [37] Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses
    Yang, Zihao
    Kent, Thomas F.
    Yang, Jing
    Jin, Hyungyu
    Heremans, Joseph P.
    Myers, Roberto C.
    [J]. PHYSICAL REVIEW B, 2015, 92 (22)
  • [38] Two-dimensional electron transport in selectively doped Ga0.25In0.75As0.5P0.5/InP heterostructure
    [J]. 1600, American Inst of Physics, Woodbury, NY, USA (75):
  • [39] Tunable far-IR detectors/filters based on plasmons in two dimensional electron gases in InGaAs/InP heterostructures
    Buchwald, W. R.
    Saxena, H.
    Peale, R. E.
    [J]. INFRARED SPACEBORNE REMOTE SENSING AND INSTRUMENTATION XV, 2007, 6678
  • [40] Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP with strong disorder
    Pödör, B
    Kovács, G
    Reményi, G
    Savel'ev, IG
    Kiss, G
    Novikov, SV
    [J]. OPTICAL PROPERTIES OF SEMICONDUCTOR NANOSTRUCTURES, 2000, 81 : 71 - 76
12345