N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

被引：0
|
作者：
Hatori, N. [1 ]
Mukaihara, T. [1 ]
Ohnoki, N. [1 ]
Mizutani, A. [1 ]
Koyama, F. [1 ]
Iga, K. [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS | 1996年
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页码：386 / 387
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