N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

被引：0
|
作者：
Hatori, N. [1 ]
Mukaihara, T. [1 ]
Ohnoki, N. [1 ]
Mizutani, A. [1 ]
Koyama, F. [1 ]
Iga, K. [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS | 1996年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：386 / 387
相关论文
共 50 条
  • [1] N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition
    Tokyo Inst of Technology, Yokohama, Japan
    Conf Quant Electron Laser Sci QELS Tech Dig Ser, (184-185):
  • [2] InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition
    Yang Guowen Xu Zuntu Ma Xiaoyu Xu Junying Zhang Jingming Chen Lianghui (Institute of Semiconductors
    半导体学报, 1998, (07) : 69 - 72
  • [3] INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL LASERS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
    YORK, PK
    BEERNINK, KJ
    FERNANDEZ, GE
    COLEMAN, JJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) : 508 - 511
  • [4] 980 nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
    Chinese Acad of Sciences, Beijing, China
    Electron Lett, 13 (1312-1313):
  • [5] Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
    Yin, T
    Lian, P
    Xu, ZT
    Chen, CH
    Zhao, HD
    Zou, DS
    Chen, JX
    Gao, G
    Du, JY
    Tao, CB
    Shen, GD
    Lu, H
    Zheng, LX
    Chen, LH
    SEMICONDUCTOR LASERS III, 1998, 3547 : 48 - 53
  • [6] n-type delta doped strained quantum well lasers for improved modulation bandwidth
    Buchinsky, O
    Blumin, M
    Sarfaty, R
    Fekete, D
    Orenstein, M
    Eisenstein, G
    APPLIED PHYSICS LETTERS, 1997, 70 (14) : 1787 - 1789
  • [7] n-type delta doped strained quantum well lasers for improved modulation bandwidth
    Technion-Israel Inst of Technology, Haifa, Israel
    Appl Phys Lett, 14 (1787-1789):
  • [8] Power loss mechanisms in n-type modulation-doped AlGaAs/GaAsBi quantum well heterostructures
    Donmez, O.
    Aydin, M.
    Ardali, S.
    Yildirim, S.
    Tiras, E.
    Erol, A.
    Puustinen, J.
    Hilska, J.
    Guina, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (09)
  • [9] 980nm InGaAs/InGaAsP quantum well lasers with AlGaAs cladding grown by metal organic chemical vapour deposition
    Yang, GW
    Xu, ZT
    Ma, XY
    Xu, JY
    Zhang, JM
    Chen, LH
    ELECTRONICS LETTERS, 1998, 34 (13) : 1312 - 1313
  • [10] Four-Well Highly Strained Quantum Cascade Lasers grown by metal-organic chemical vapor deposition
    Hsu, Allen
    Hu, Qing
    Williams, Benjamin
    2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 1047 - +
12345