PHOTOLUMINESCENCE AND ELECTRICAL PROPERTIES OF UNDOPED AND Cl-DOPED ZnSe.

被引:0
|
作者
Satoh, Shiro
Igaki, Kenzo
机构
来源
| 1600年 / 22期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy
    Tanaka, T
    Hayashida, K
    Nishio, M
    Guo, QX
    Ogawa, H
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1527 - 1530
  • [42] Raman scattering of longitudinal-optical-phonon-plasmon coupling in Cl-doped ZnSe under high pressure
    Lin, Y. C.
    Chiu, C. H.
    Fan, W. C.
    Chia, C. H.
    Yang, S. L.
    Chuu, D. S.
    Lee, M. C.
    Chen, W. K.
    Chang, W. H.
    Chou, W. C.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (12)
  • [43] Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe
    Gurskii, AL
    Marko, IP
    Yuvchenko, VN
    Yablonskii, GP
    Hamadeh, H
    Taudt, W
    Sollner, J
    Kalisch, H
    Heuken, M
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 757 - 762
  • [44] Photoluminescence decay dynamics and mechanism of energy transfer in undoped and Mn2+ doped ZnSe nanoparticles
    Olano, EM
    Grant, CD
    Norman, TJ
    Castner, EW
    Zhang, JZ
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2005, 5 (09) : 1492 - 1497
  • [45] Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods
    Ji, X. H.
    Lau, S. P.
    Yu, S. F.
    Herng, T. S.
    Yang, H. Y.
    Tang, S. Y.
    Sedhain, A.
    Lin, J. Y.
    Jiang, H. X.
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 206 - +
  • [46] Electrical Properties of ZnSe Crystals Doped with Transition Elements
    Nitsuk, Yu. A.
    Vaksman, Yu. F.
    SEMICONDUCTORS, 2017, 51 (06) : 751 - 754
  • [47] Electrical properties of ZnSe crystals doped with transition elements
    Yu. A. Nitsuk
    Yu. F. Vaksman
    Semiconductors, 2017, 51 : 751 - 754
  • [48] Electrical properties of ZnSe crystals doped with transition metals
    Avdonin, AN
    Kolibaba, GV
    Nedeoglo, DD
    Nedeoglo, ND
    Sirkeli, VP
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (02): : 733 - 737
  • [49] Optical investigation of Cl-doped ZnSe and ZnSxSe1-x layers grown by metalorganic vapour phase epitaxy
    Hermans, J
    Woitok, J
    Geurts, J
    Sollner, J
    Heuken, M
    Stanzl, H
    Gebhardt, W
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 363 - 367
  • [50] TEMPERATURE-VARIATIONS IN ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF ZNSE GROWN BY MOCVD
    GIAPIS, KP
    LU, DC
    JENSEN, KF
    POTTS, JE
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) : 291 - 296