Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

被引：0
|
作者：
Cambridge Univ, Cambridge, United Kingdom [1 ]
机构：
来源：
Appl Phys Lett | / 12卷 / 1704-1706期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Ferroelectric properties and structure distortion in A-site-modified SrBi2Ta2O9
    Noguchi, Y
    Shimizu, H
    Miyayama, M
    Oikawa, K
    Kamiyama, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B): : 5812 - 5815
  • [32] Film structure and ferroelectric properties of in situ grown SrBi2Ta2O9 films
    Dinu, R
    Dinescu, M
    Pedarnig, JD
    Gunasekaran, RA
    Bäuerle, D
    Bauer-Gogonea, S
    Bauer, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01): : 55 - 61
  • [33] Electronic and structual properties of ferroelectric SrBi2Ta2O9, SrBi2Nb2O9 and PbBi2Nb2O9
    Miura, K
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S1244 - S1247
  • [34] Group theoretical analysis of the domain structure of SrBi2Ta2O9 ferroelectric ceramic
    Chen, XJ
    Liu, JS
    Zhu, JS
    Wang, YN
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (16) : 3745 - 3749
  • [35] Ferroelectric properties and structure distortion in a-site-modified SrBi2Ta2O9
    Noguchi, Yuji
    Shimizu, Hiroyuki
    Miyayama, Masaru
    Oikawa, Kenichi
    Kamiyama, Takashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (9 B): : 5812 - 5815
  • [36] Structure and voltage dependence of ferroelectric properties of SrBi2Ta2O9 thin films
    Zhang, ZG
    Liu, JS
    Wang, YN
    Zhu, JS
    Liu, JL
    Su, D
    Shen, HM
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) : 1746 - 1749
  • [37] Characteristics of metal/ferroelectric/insulator/semiconductor structure using SrBi2Ta2O9 as the ferroelectric material
    Nagashima, K
    Hirai, T
    Koike, H
    Fujisaki, Y
    Tarui, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B): : L1680 - L1682
  • [38] Ferroelectric characterization of SrBi2Ta2O9 obtained by microwave processing
    Souza, Ricson R.
    Thomazini, Daniel
    Gelfuso, Maria V.
    Amorin, Harvey
    Pereira, Altair S.
    Sousa, Vania C.
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2017, 18 (01): : 73 - 78
  • [39] Stress evolution in integrated SrBi2Ta2O9 ferroelectric layers
    Lisoni, JG
    Wafer, K
    Johnson, JA
    Goux, L
    Schwitters, M
    Paraschiv, V
    Maes, D
    Haspeslagh, L
    Caputa, C
    Zambrano, R
    Wouters, DJ
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 3 - 8
  • [40] Thermal behavior in ferroelectric SrBi2Ta2O9 thin films
    Onodera, A
    Yoshio, K
    Myint, CC
    Tanaka, M
    Hironaka, K
    Kojima, S
    FERROELECTRICS, 2000, 241 (1-4) : 159 - 166
12345