HOT ELECTRON SPECTROSCOPY OF GaAs.

被引：0
|
作者：
Levi, A.F.J. [1 ]
Hayes, J.R. [1 ]
Platzman, P.M. [1 ]
Wiegmann, W. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1985年 / 134 B-C卷 / 1-3期
关键词：
HOT ELECTRONS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：480 / 486
相关论文
共 50 条
  • [31] Observation of hot electron relaxation in GaAs/AlGaAs multiple quantum wells by excitation spectroscopy
    Wu, H.Z.
    Liu, J.H.
    Dong, G.O.
    Wu, J.Z.
    Ye, Z.Z.
    Jiang, X.B.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (04):
  • [32] ANALYSIS OF THERMALLY STIMULATED CURRENT SPECTROSCOPY IN SEMIINSULATING GaAs. I. INITIALIZATION.
    Tomozane, Mamoru
    Nannichi, Yasuo
    Onodera, Isao
    Fukase, Tadashi
    Hasegawa, Fumio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1988, 27 (02): : 260 - 268
  • [33] HOT-ELECTRON ELECTROABSORPTION IN GAAS
    MCGRODDY, JC
    CHRISTEN.O
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 325 - &
  • [34] THE GAAS HOT-ELECTRON TRANSISTOR
    DUMKE, WP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C428 - C428
  • [35] ORIENTATION OF THE FIELD IN THE SPONTANEOUS ELECTROABSORPTION IN GaAs.
    Akopyan, R.M.
    Berozashvili, Yu.N.
    Dzhanelidze, M.B.
    Dundua, A.V.
    1600, (16):
  • [36] DEFECT STRAIN FIELDS IN EPITAXIAL GaAs.
    Wie, C.R.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B24-25 (pt 1 Apr III) : 562 - 564
  • [37] OXYGEN ION BEAM MODIFICATION OF GaAs.
    Deng, Xian-Can
    Nuclear instruments and methods in physics research, 1982, 209-210 (Pt 2): : 657 - 661
  • [38] LIQUID PHASE EPITAXIAL GROWTH OF GaAs.
    Iida, Hideyo
    Uchida, Nobuo
    Komiya Yoshio
    Tarui, Yasuo
    Bulletin of the Electrotechnical Laboratory, Tokyo, 1976, 40 (4-5): : 458 - 464
  • [39] POINT DEFECT MOBILITY IN IRRADIATED GaAs.
    Kolchenko, T.I.
    Lomako, V.M.
    Maronchuk, I.E.
    Radiation effects letters, 1980, 57 (05): : 137 - 142
  • [40] MECHANISM FOR ACTIVATING TIN IMPLANTS IN GaAs.
    Bensalem, R.
    Sealy, B.J.
    1600, (36): : 11 - 12
12345