HOT ELECTRON SPECTROSCOPY OF GaAs.

被引：0
|
作者：
Levi, A.F.J. [1 ]
Hayes, J.R. [1 ]
Platzman, P.M. [1 ]
Wiegmann, W. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics | 1985年 / 134 B-C卷 / 1-3期
关键词：
HOT ELECTRONS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：480 / 486
相关论文
共 50 条
  • [1] HOT-ELECTRON SPECTROSCOPY OF GAAS
    LEVI, AFJ
    HAYES, JR
    PLATZMAN, PM
    WIEGMANN, W
    PHYSICA B & C, 1985, 134 (1-3): : 480 - 486
  • [2] HOT-ELECTRON SPECTROSCOPY OF GAAS
    HAYES, JR
    LEVI, AFJ
    WIEGMANN, W
    PHYSICAL REVIEW LETTERS, 1985, 54 (14) : 1570 - 1572
  • [3] ULTRAFAST RELAXATION OF HOT PHOTOEXCITED CARRIERS IN GaAs.
    Ferry, D.K.
    Osman, M.A.
    Joshi, R.
    Kann, M.-J.
    Solid-State Electronics, 1987, 31 (3-4) : 401 - 406
  • [4] Hot electron spectroscopy of the GaAs/AlAs/GaAs band structure
    Pacher, C
    Kast, M
    Roch, T
    Strasser, G
    Gornik, E
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S102 - S103
  • [5] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GaAs.
    Henry, H.George
    Dawson, Dale E.
    Lemnios, Zachary J.
    Kim, Hebong
    IEEE Transactions on Electron Devices, 1984, ED-31 (08) : 1100 - 1103
  • [6] Recombination centers in electron irradiated Si and GaAs.
    Bourgoin, JC
    Zazoui, M
    Zaidi, MA
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 629 - 634
  • [7] Spectroscopy of hot electron photoluminescence in GaAs/AlAs superlattices
    Sapega, VF
    Perel, VI
    Mirlin, DN
    Ruf, T
    Cardona, M
    Winter, W
    Eberl, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 215 (01): : 379 - 386
  • [8] Hot electron spectroscopy of undoped GaAs/GaAlAs superlattices
    Solid State Electronics, Technical University of Vienna, Floragasse 7, A-1040 Wien, Austria
    不详
    Superlattices Microstruct, 2 (X-148):
  • [9] Hot electron spectroscopy of undoped GaAs/GaAlAs superlattices
    Rauch, C
    Strasser, G
    Unterrainer, K
    Hvozdara, L
    Boxleitner, W
    Gornik, E
    Brill, B
    Meirav, U
    SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (02) : 143 - 148
  • [10] INERTIAL PROPERTIES OF HOT ELECTRONS IN n-TYPE GaAs.
    Raguotis, R.
    Reklaitis, A.
    Soviet physics. Semiconductors, 1981, 15 (08): : 906 - 908
12345