Structural and electrical properties of p+n junctions in Si by low energy Ga+ implantation

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 10卷 / 4990期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions
    Poklonski, N. A.
    Gorbachuk, N. I.
    Shpakovski, S. V.
    Petrov, A. V.
    Lastovskii, S. B.
    Fink, D.
    Wieck, A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (23): : 5007 - 5012
  • [42] Electrical characterization of Si+ and Si+/P+ implanted N+P In0.53Ga0.47As junctions
    Blanco, M.N.
    Redondo, E.
    León, C.
    Santamaria, J.
    González-Diaz, G.
    Journal of Materials Science: Materials in Electronics, 1999, 10 (05): : 425 - 428
  • [43] Temperature Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation
    Nagata, Shohei
    Satoh, Masataka
    Doi, Hiroshi
    Shibagaki, Masami
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, 2009, (27): : 85 - 88
  • [44] FORMATION OF PTSI-CONTACTED P+N SHALLOW JUNCTIONS BY BF2+ IMPLANTATION AND LOW-TEMPERATURE FURNACE ANNEALING
    TSUI, BY
    TSAI, JY
    CHEN, MC
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 4354 - 4363
  • [45] Electrical characterization of Si+ and Si+/P+ implanted N+PIn0.53Ga0.47As junctions
    Blanco, MN
    Redondo, E
    León, C
    Santamaria, J
    González-Diaz, G
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (5-6) : 425 - 428
  • [46] ELECTRICAL PROPERTIES OF P-N JUNCTIONS FORMED BY ION IMPLANTATION IN N-TYPE SiC.
    Kalinina, E.V.
    Prokof'eva, N.K.
    Suvorov, A.V.
    Kholuyanov, G.F.
    Chelnokov, V.E.
    1978, 12 (12): : 1372 - 1374
  • [47] FORMATION OF P(+)N JUNCTIONS BY SI(+)+B(+) IMPLANTATION AND LASER ANNEALING
    JUANG, MH
    CHENG, HC
    APPLIED PHYSICS LETTERS, 1992, 60 (17) : 2092 - 2094
  • [48] Electrical properties of p+-GaAs//patterned metal layer/n+-Si junctions
    Hishida, Takashi
    Liang, Jianbo
    Shigekawa, Naoteru
    PROCEEDINGS OF 2019 6TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D), 2019, : 58 - 58
  • [49] Comparative study on strain induced electrical properties modulation of Si p-n junctions
    Wu, Wangran
    Pu, Yu
    Wang, Junzhuan
    Xu, Xiangming
    Sun, Jiabao
    Yuan, Zhe
    Shi, Yi
    Zhao, Yi
    APPLIED PHYSICS LETTERS, 2013, 102 (09)
  • [50] Doping Level Dependence of Electrical Properties for p+n 4H-SiC Diode Formed by Al Ion Implantation
    Satoh, Masataka
    Nagata, Shohei
    Nakamura, Tohru
    Doi, Hiroshi
    Shibagaki, Masami
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 679 - 682
12345